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| SMD Type Silicon NPN Epitaxial Planar Type 2SD1328 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features Low ON resistance Ron. Low collector-emitter saturation voltage VCE(sat). High foward current transfer ratio hFE. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 25 20 12 1 0.5 200 150 -55 to +150 Unit V V V A A mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Collector-base voltage Collector-emitter voltage Emitter-base voltage Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO VCBO VCEO VEBO hFE Testconditons VCB = 25 V, IE = 0 IC = 10 iA, IE = 0 IC = 1 mA, IB = 0 IE = 10 iA, IC = 0 VCE = 2 V, IC = 0.5 A 25 20 12 200 0.13 800 0.4 1.2 200 10 V V MHz pF Min Typ Max 100 Unit nA V V V VCE(sat) IC = 0.5 A, IB = 20 mA VBE(sat) IC = 0.5 A, IB = 50 mA fT Cob VCB = 10 V, IE = -50 mA , f = 200 MHz VCB = 10V , IE = 0 , f = 1.0MHz ON resistanse Ron 1.0 +0.1 0.38-0.1 0-0.1 U hFE Classification Marking Rank hFE R 200 350 1D S 300 500 T 400 800 www.kexin.com.cn 1 |
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